Title:
シリコン系薄膜及びその製造方法
Document Type and Number:
Japanese Patent JP7076096
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a material of a thermoelectric conversion element, having a high thermoelectric property and a low environmental burden, and a method of efficiently producing the same.SOLUTION: A silicon-based thin film is a polycrystalline thin film containing barium and silicon as constituent elements. The silicon-based thin film is characterized to comprise a crystal silicon particle and a particle having a phase different from the phase of the crystal silicon particle, a crystal phase of the highest peak in X-ray diffraction being silicon. The thin film is deposited at a temperature of 400°C or above and 700°C or below using a sputtering target including a main crystalline layer comprising BaSi2.SELECTED DRAWING: None
Inventors:
Masami Soda
Kuramochi Australian
Hiroshi Funakubo
Mitsuo Kurokawa
Kuramochi Australian
Hiroshi Funakubo
Mitsuo Kurokawa
Application Number:
JP2018068515A
Publication Date:
May 27, 2022
Filing Date:
March 30, 2018
Export Citation:
Assignee:
Tosoh Corporation
National University Corporation Tokyo Institute of Technology
National University Corporation Tokyo Institute of Technology
International Classes:
H01L35/14; C23C14/14; C23C14/34; H01L21/203; H01L35/22; H01L35/26; H01L35/34
Foreign References:
| WO1999022410A1 |
Attorney, Agent or Firm:
Toshiharu Ogawa
Kenji Izumina
Kim Wen
Ken Higino
Daiichiro Yokoi
Kenji Izumina
Kim Wen
Ken Higino
Daiichiro Yokoi
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