To provide a silicon carbide based porous compact and a method for manufacturing the same which is high in porosity, high in thermal conductivity, moreover heighten in strength, as well as capable of producing with a low cost.
The silicon carbide based porous compact consists of silicon carbide grain and metallic silicon to be an aggregate. A mean pore diameter of silicon carbide based porous compact is larger than a mean grain diameter of silicon carbide grains by ≥2.5 times. The silicon carbide based porous compact is manufactured by forming a material obtained by mixing and kneading a raw material of silicon carbide grain, metallic silicon and an organic binder, into predetermined shape, the obtained compact is preliminary fired to eliminate organic binder in the compact, then the compact is normally fired.
TABUCHI YUICHIRO
ICHIKAWA SHUICHI
HARADA SETSU
| JPH0517227A | 1993-01-26 | |||
| JPH08217565A | 1996-08-27 | |||
| JPS60255671A | 1985-12-17 | |||
| JPH10310474A | 1998-11-24 | |||
| JPS6428285A | 1989-01-30 | |||
| JPH1052618A | 1998-02-24 | |||
| JPH0985038A | 1997-03-31 |