SILICON CARBIDE COMPOSITE MATERIAL AND ITS PRODUCTION

Japanese Patent JP3208045

B2

PROBLEM TO BE SOLVED: To obtain a composite material developing no atmospheric contamination even under high-temperature conditions, and suitable for e.g. the reaction tubes for semiconductor diffusion oven, by specifying the spectrum absorption end of silicon carbide film.
SOLUTION: This composite material is made up of a basal body as a porous silicon carbide sintered compact produced by molding and sintering high-purity silicon carbide powder to a specified reaction tube shape and silicon carbide film(s) as β-SiC chemical vapor deposition film(s) on one or both of the circumferential surfaces of the basal body depending on e.g. the working conditions for the reaction tube. Since the content of heavy metal elements such as Fe, Cu and Cr in the silicon carbide film(s) is extremely low, wafer contamination due to evaporation of such impurities does not occur. Although there are some limitations in the film-forming conditions, it is so specified that the spectrum absorption end falls between 520 and 550nm. This composite material is obtained by the following process: the basal body is placed in a CVD oven which is then depressurized to 0.1-200Torr and then fed with monomethyl trichlorosilane as reaction gas at 1400-1500°C followed by continuous exhaustion to effect CVD so as to be 50-150μm in film thickness.

Masuzou Yamada
Kichiya Tanino
Yasuhiro Akune
Seiji Onishi

JP17096795A

September 10, 2001

July 06, 1995

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Nippon Pillar Industry Co., Ltd.

C04B38/00; C04B41/50; C23C16/30; C23C16/32; C23C16/42; C23C16/44; C23C16/458; C30B25/10; (IPC1-7): C04B38/00; C23C16/30; C23C16/32; C23C16/42; C23C16/44; C30B25/10

JP6340479A

Takeo Sugimoto

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