SILICON CARBIDE ELECTRODE AND ITS PRODUCTION

Title:

SILICON CARBIDE ELECTRODE AND ITS PRODUCTION

Document Type and Number:

Japanese Patent JPH04130061

Kind Code:

A

Abstract:

PURPOSE: To obtain an electrode having superior corrosion, oxidation and heat resistance by mixing specified two kinds of SiC powders and sintering the mixture without adding a sintering aid.

CONSTITUTION: First SiC of 0.1-10μm average particle size is mixed with second SiC powder of ≤0.1μm average particle size and the mixture is sintered without adding a sintering aid to obtain an SiC electrode. This SiC sintered body has ≤2.8g/cm3 density, ≤1 Ω.cm electric specific resistance at room temp. and ≥150W/mk heat conductivity. The second SiC powder is obtd. by bringing gaseous starting material consisting of a silane compd. or silicon halide and hydrocarbon into a vapor phase reaction in plasma in a nonoxidizing atmosphere under <1atm-0.1 Torr pressure.

Inventors:

KONISHI MIKIRO
MIYAZAWA YOICHI
MORIOKA TARO

Application Number:

JP8371490A

Publication Date:

May 01, 1992

Filing Date:

March 30, 1990

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SUMITOMO CEMENT CO

International Classes:

C04B35/626; C04B35/56; C04B35/565; C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): C04B35/56; C23F4/00; H01L21/302

Attorney, Agent or Firm:

Masatake Shiga (2 outside)

Previous Patent: JPH04130060

Next Patent: SILICON NITRIDE-BASED SINTERED BODY AND ITS PRODUCTION