Title:
炭化珪素エピタキシャル基板、炭化珪素半導体装置の製造方法および炭化珪素半導体装置
Document Type and Number:
Japanese Patent JP7211456
Kind Code:
B2
Abstract:
A method for manufacturing a silicon carbide epitaxial substrate includes epitaxially growing a first layer on a silicon carbide single crystal substrate, and forming a second layer at an outermost surface of the first layer. The second layer has a chemical composition or density different from that of the first layer. A ratio of a thickness of the second layer to a thickness of the first layer is more than 0% and less than or equal to 10%.
Inventors:
Keiji Wada
Fukumura Masami
Toru Hiyoshi
Fukumura Masami
Toru Hiyoshi
Application Number:
JP2021108742A
Publication Date:
January 24, 2023
Filing Date:
June 30, 2021
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B29/36; C23C16/34; C30B25/20; H01L21/205
Domestic Patent References:
| JP2013014469A | ||||
| JP2007066944A | ||||
| JP2008235331A | ||||
| JP2006313850A | ||||
| JP1286997A | ||||
| JP2003142357A |
Foreign References:
| WO2011142074A1 | ||||
| WO2015064256A1 |
Other References:
Osamu Ishiyama et al.,Gate oxide reliability on trapezoid-shaped defects and obtuse triangular defects in 4H-SiC epitaxial wefers,Japanese journal of Applied Physics,2014年03月,Volume 53, Number 4S,04EP15-1 - 04EP15-4
Attorney, Agent or Firm:
Patent Attorney Fukami Patent Office
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