PURPOSE: To obtain a mirror with high reflectance suitable especially for high energy by forming a β-form silicon carbide surface by a chemical vapor deposition method while providing specified crystallizability and size.
CONSTITUTION: This silicon carbide mirror has a β-form silicon carbide surface formed by a chemical vapor deposition method. The half-value width of the (200) faces of silicon carbide crystals in the polished surface under X-ray diffraction is ≤0.40°. Silicon carbide crystals obtd. by the deposition method have close relation with the reflectance when conditions during manufacture are changed in several ways, and the reflectance is practically in proportion to the crystallizability and size of the obtd. silicon carbide crystals. The crystallizability and size can be measured by X-ray diffraction, and relation represented by the equation (where β is half-value width, θ is Bragg angle, λ is the wavelengths of characteristic X-rays, is the size of crystallite, and η is the effective strain of the lattice) is established.
KARITA AKIO
MATSUO HIDEYASU
Next Patent: REFLECTION MIRROR