Title:
炭化珪素半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP5482745
Kind Code:
B2
Abstract:
A semiconductor device includes a silicon carbide semiconductor substrate, a transistor formed in a cell region of the semiconductor substrate, and a voltage-breakdown-resistant structure formed in a region which surrounds an outer periphery of the cell region. The semiconductor substrate includes a first conductivity type substrate, a first conductivity type drift layer on the first conductivity type substrate, a second conductivity type layer on the drift layer, and a first conductivity type layer on the second conductivity type layer. The voltage-breakdown-resistant structure includes a first recess which surrounds the outer periphery of the cell region and reaches the drift layer, a trench located at a side surface of the recess on an inner periphery of the recess, and a second conductivity type buried layer buried in the trench to provide the side surface of the first recess.
Inventors:
Yuichi Takeuchi
Giant Suzuki
Giant Suzuki
Application Number:
JP2011174774A
Publication Date:
May 07, 2014
Filing Date:
August 10, 2011
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L21/337; H01L21/338; H01L27/098; H01L29/06; H01L29/12; H01L29/78; H01L29/808; H01L29/812
Domestic Patent References:
| JP2010147222A | ||||
| JP2010225615A | ||||
| JP2005340250A | ||||
| JP2005518672A |
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office