Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2023045788
Kind Code:
A
Abstract:
To improve performance of a silicon carbide semiconductor device comprising a vertical SiC power MISFET including a trench formed on a top face of an SiC epitaxial wafer.SOLUTION: A silicon carbide semiconductor device comprises: a trench 9 formed on a top face of a semiconductor layer and including a first side face and a second side face which are opposed to each other in a first direction along the top face of the semiconductor layer; a gate electrode 2 formed inside the trench 9 via an insulation film 7; a body layer 5 in contact with the first side face; a current diffusion region 17 in contact with the first side face and the second side face; and a guard region 8 covering a corner of a bottom face of the trench 9 at the side of the first side face and separated from a corner of the bottom face of the trench 9 at the side of the second side face. In a first direction, a film thickness of the insulation film 7 covering the second side face is larger than a film thickness of the insulation film 7 covering the first side face. The current diffusion region 17 is separated from a side face in a second direction, which crosses the first direction in a planar view, and the guard region 8 covers all four corners of the bottom face of the trench 9.SELECTED DRAWING: Figure 1
Inventors:
SUEMATSU CHIKA
SUTO TAKERU
SUTO TAKERU
Application Number:
JP2021154358A
Publication Date:
April 03, 2023
Filing Date:
September 22, 2021
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/78; H01L21/336; H01L29/12
Attorney, Agent or Firm:
Patent Attorney Tsutsui International Patent Office
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