SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR SUBSTRATE

Title:

SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR SUBSTRATE

Document Type and Number:

Japanese Patent JP2023130240

Kind Code:

A

Abstract:

To provide a silicon carbide semiconductor device capable of improving a reverse recovery characteristic, and provide a silicon carbide semiconductor substrate.SOLUTION: An n+ type SiC substrate 31 constituting a n+ type drain region 1, contains nitrogen being a doner within a predetermined concentration range (a predetermined impurity concentration of the n+ type drain region 1), and contains all of boron, aluminum, and titanium as an impurity other than nitrogen in a total impurity concentration range at a level that does not affect the n type impurity concentration of the n+ type SiC substrate (an impurity concentration of the n+ type drain region). The boron, aluminum, and titanium in an n+ type SiC substrate 31 function as a life time killer of majority carriers. The concentration of boron of the n+ type SiC substrate 31 is within a range of 5×1016/cm3 or more and 1×1017/cm3 or less. The concentration of aluminum and the concentration of titanium of the n+ type SiC substrate 31 are each within a range of 1×1016/cm3 or more and 5×1016/cm3 or less.SELECTED DRAWING: Figure 3

More Like This:

JP5168876	Semiconductor devices and their manufacturing methods
JP4349798	Manufacturing method of semiconductor devices

Inventors:

UCHIUMI MAKOTO
MIYASATO MAKI

Application Number:

JP2022034816A

Publication Date:

September 20, 2023

Filing Date:

March 07, 2022

Export Citation:

Click for automatic bibliography generation Help

Assignee:

FUJI ELECTRIC CO LTD

International Classes:

H01L29/78; H01L29/12; H01L29/861

Attorney, Agent or Firm:

Akinori Sakai

Previous Patent: Method for producing radical curable resin composition

Next Patent: flux and solder paste