Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2017130597
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which can inhibit extension of a defect caused by an operation of a body diode to ensure stability as a switching element even in an operation under high-voltage, high-power and high-temperature conditions.SOLUTION: A silicon carbide semiconductor device comprises: p-type well regions 13 formed in a plurality of parts of a surface part on one side of an n-type epitaxial layer 12 in a thickness direction; n-type source regions 14 formed inside respective well regions 13; p-type well contact regions 15 formed in part of respective source regions 14; a gate electrode 22 formed via a gate insulation film 21, from a portion of a surface of the source region 14 across a surface of the well region 13 and a surface of the epitaxial layer 12; an interlayer insulation film 23 formed on the gate electrode 22; a source electrode 24 formed on the interlayer insulation film 23; and a drain electrode 26 formed via a Schottky electrode 25, on a surface part of the other side of the epitaxial layer 12 in the thickness direction.SELECTED DRAWING: Figure 1
Inventors:
EBIIKE YUJI
YUYA NAOKI
YUYA NAOKI
Application Number:
JP2016010252A
Publication Date:
July 27, 2017
Filing Date:
January 22, 2016
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L29/78; H01L29/12; H01L29/47; H01L29/872
Domestic Patent References:
| JP2014063980A | 2014-04-10 |
Foreign References:
| US20040082116A1 | 2004-04-29 | |||
| WO1998057374A1 | 1998-12-17 |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita