Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2021150407
Kind Code:
A
Abstract:
To provide a silicon carbide semiconductor device having a structure that does not restrict a wire bonding region while suppressing the decrease in active region.SOLUTION: A semiconductor device 50 includes, in an active region where main current flows in the ON time, a semiconductor substrate 1 with a first conductivity type, a first semiconductor layer 2 with the first conductivity type, a second semiconductor layer 3 with a second conductivity type, a first semiconductor region 7 with the first conductivity type, a gate insulating film 9, a gate electrode 10, an interlayer insulating film 11, a first electrode 13, a second electrode 14, a first trench 18, a second trench 21, a polycrystalline silicon layer 17 provided in the second trench 21 through the gate insulating film 9, and a silicide layer 22 provided selectively on a surface layer of the polycrystalline silicon layer 17. The polycrystalline silicon layer 17 and the silicide layer 22 are electrically connected to the gate electrode 10.SELECTED DRAWING: Figure 1
Inventors:
KINOSHITA AKIMASA
Application Number:
JP2020046992A
Publication Date:
September 27, 2021
Filing Date:
March 17, 2020
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H01L29/78; H01L21/28; H01L21/336; H01L29/12; H01L29/423; H01L29/49
Attorney, Agent or Firm:
Akinori Sakai