Title:
Silicon carbide semiconductor device
Document Type and Number:
Japanese Patent JP6238854
Kind Code:
B2
More Like This:
JP7045008 | Schottky barrier diode |
JPH10125937 | SCHOTTKY BARRIER SEMICONDUCTOR DEVICE |
JP2002100772 | SEMICONDUCTOR DEVICE FOR ELECTRIC POWER AND ITS MANUFACTURING METHOD |
Inventors:
Koyama Koyo
Hidenori Tsuji:
Hidenori Tsuji:
Application Number:
JP2014160036A
Publication Date:
November 29, 2017
Filing Date:
August 06, 2014
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L29/872; H01L21/822; H01L27/04; H01L29/47
Domestic Patent References:
JP2010205833A | ||||
JP2007141986A | ||||
JP2009224661A | ||||
JP2006086417A | ||||
JP2013145831A |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita