SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR FORMING ITS INSULATION FILM

Japanese Patent JP3697211

B2

PROBLEM TO BE SOLVED: To provide an insulation film of a silicon carbide semiconductor element in which an interface state density sufficient as the semiconductor element is reduced in the insulation film/silicon carbide interface of the semiconductor element, and to provide a method for forming the same.
SOLUTION: The silicon carbide semiconductor element comprises a silicon carbide board having a step including a height of two atomic layers or more on a surface, and an oxide film formed on a surface of the silicon carbide board so that an interface state density of the oxide film and a silicon carbide is 1.5×1012 cm-2 or less. The method for forming the insulation film of the silicon carbide semiconductor element comprises the steps of holding a plurality of set temperatures in an atmosphere containing an oxygen, annealing the film, second time annealing at a temperature set lower than the first time annealing set temperature continued to the first time annealing, and annealing n times (n≥2) in the atmosphere containing the oxygen held at at least two more different temperatures.

Masato Yoshikawa
Hisayoshi Ito
Makoto Kitabatake
Kenya Yamashita
Osamu Kusumoto
Masao Uchida
Kunikata Takahashi
Miyanaga Saki

JP2002003834A

September 21, 2005

January 10, 2002

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Japan Atomic Energy Research Institute
Matsushita Electric Industrial Co., Ltd

H01L21/316; H01L21/336; H01L29/12; H01L29/78; (IPC1-7): H01L29/78; H01L21/316; H01L21/336

JP11251592A
JP11274487A

Kazuo Shamoto
Tadashi Masui
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Shurin Sakurai

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