Title:
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2015086128
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor substrate capable of suppressing occurrence of a crack.SOLUTION: A silicon carbide semiconductor substrate 10 comprises: a first principal surface 10a; and a second principal surface 10b on the opposite side of the first principal surface 10a. The maximum diameter of the first principal surface 10a is larger than 100 mm, and a thickness of the silicon carbide semiconductor substrate 10 is 700 μm or less. In a region OR2 within 5 mm from an outer peripheral end part OR of the first principal surface 10a toward the center O of the first principal surface 10a, dislocation density of any region having an area of 1 mmis 500/mmor less.
Inventors:
TANAKA SATOSHI
OKITA KYOKO
NISHIGUCHI TARO
KUBOTA RYOSUKE
KAMBARA KENJI
OKITA KYOKO
NISHIGUCHI TARO
KUBOTA RYOSUKE
KAMBARA KENJI
Application Number:
JP2014014412A
Publication Date:
May 07, 2015
Filing Date:
January 29, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B29/36
Domestic Patent References:
| JP2013087005A | 2013-05-13 | |||
| JP2013087005A | 2013-05-13 |
Attorney, Agent or Firm:
Fukami patent office