Title:
炭化珪素単結晶およびその製造方法
Document Type and Number:
Japanese Patent JP7024622
Kind Code:
B2
Abstract:
A silicon carbide single crystal contains a heavy metal element having a specific gravity higher than a specific gravity of iron. An addition density of the heavy metal element at least in an outer peripheral portion of the silicon carbide single crystal is set to 1×1015 cm−3 or more.
Inventors:
Yuichiro Tokuda
Hideyuki Kamito
Norihiro Hoshino
KAMADA Koho
Shuichi Tsuchida
Hideyuki Kamito
Norihiro Hoshino
KAMADA Koho
Shuichi Tsuchida
Application Number:
JP2018116384A
Publication Date:
February 24, 2022
Filing Date:
June 19, 2018
Export Citation:
Assignee:
株式会社デンソー
International Classes:
C30B29/36; C30B25/02
Domestic Patent References:
| JP2002234800A | ||||
| JP2012250864A | ||||
| JP2006124247A |
Foreign References:
| WO2012029952A1 |
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office