Title:
SILICON CARBIDE SINTERED COMPACT AND SEMICONDUCTOR USING THE SAME, AND MEMBER FOR LIQUID CRYSTAL-MANUFACTURING APPARATUS
Document Type and Number:
Japanese Patent JP2005314157
Kind Code:
A
Abstract:
To provide a closely packed silicon carbide sintered compact with very little vacancy and a semiconductor using the same, and to provide a member for liquid crystal-manufacturing apparatus.
The silicon carbide sintered compact comprises, as a sintering aid, aluminum and/or an aluminum compound, boron and/or a boron compound, and carbon and/or a compound which can be carbonized, wherein the silicon carbide sintered compact has a relative density of 98% or more. A reflective coating having a reflectance of 75% or more can be easily formed by polishing the surface of the silicon carbide sintered compact to a mirror polished surface having a center line average roughness (Ra) of 15 nm or less.
Inventors:
TANAKA HIDEHIKO
MATSUO HIROYUKI
ICHIKAWA YOSHITAKA
KISHI YUKIO
MATSUO HIROYUKI
ICHIKAWA YOSHITAKA
KISHI YUKIO
Application Number:
JP2004133488A
Publication Date:
November 10, 2005
Filing Date:
April 28, 2004
Export Citation:
Assignee:
NAT INST FOR MATERIALS SCIENCE
NIHON CERATEC CO LTD
NIHON CERATEC CO LTD
International Classes:
C04B35/565; H01L21/027; (IPC1-7): C04B35/565; H01L21/027
Domestic Patent References:
| JPH11292631A | 1999-10-26 | |||
| JPH09268062A | 1997-10-14 | |||
| JPH06300907A | 1994-10-28 | |||
| JPH05246764A | 1993-09-24 |
Attorney, Agent or Firm:
Hiroshi Takayama
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