Title:
SILICON CARBIDE SUBSTRATE SUPPORT MEMBER, MEMBER FOR SILICON CARBIDE GROWTH DEVICE AND SILICON CARBIDE EPITAXIAL SUBSTRATE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2015146416
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a member which can maintain good flatness of a rear face of a silicon carbide substrate and inhibit an impurity from being introduced into the silicon carbide substrate when growing a silicon carbide epitaxial layer; and provide a manufacturing method of a silicon carbide epitaxial substrate using the member.SOLUTION: A substrate support member 21 comprises: a substrate mounting surface 21a on which a silicon carbide substrate (base substrate 1) is placed; and an installation surface 21b located on the side opposite to the substrate mounting surface 21a, for installing the substrate supporting member 21 in the inside of the silicon carbide growth device. A silicon carbide layer is formed on a principal surface 1A of the base substrate 1 by epitaxial growth. At least the substrate mounting surface 21a of the substrate support member 21 is a surface of a material which maintains a solid phase at a temperature where epitaxial growth of the silicon carbide layer is performed.
Inventors:
NISHIGUCHI TARO
GENBAN JUN
DOI HIDEYUKI
GENBAN JUN
DOI HIDEYUKI
Application Number:
JP2014246804A
Publication Date:
August 13, 2015
Filing Date:
December 05, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L21/205; C23C16/42; C23C16/44; H01L21/683
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Attorney, Agent or Firm:
Fukami patent office