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Title:
Silicon carbide-tantalum carbide compound material and a susceptor
Document Type and Number:
Japanese Patent JP6196246
Kind Code:
B2
Abstract:
Provided is a silicon carbide-tantalum carbide composite having excellent durability. A silicon carbide-tantalum carbide composite (1) includes: a body (10) whose surface layer is at least partly formed of a first silicon carbide layer (12); a tantalum carbide layer (20) ; and a second silicon carbide layer (13). The tantalum carbide layer (20) is disposed over the first silicon carbide layer (12). The second silicon carbide layer (13) is interposed between the tantalum carbide layer (20) and the first silicon carbide layer (12). The second silicon carbide layer (13) has a C/Si composition ratio of not less than 1.2 as measured by X-ray photoelectron spectroscopy. The second silicon carbide layer (13) has a peak intensity ratio G/D of not less than 1.0 between the G-band and D-band of carbon as measured by Raman spectroscopy.

Inventors:
Masato Shinohara
Application Number:
JP2014560729A
Publication Date:
September 13, 2017
Filing Date:
January 28, 2014
Export Citation:
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Assignee:
Toyo Tanso Co., Ltd.
International Classes:
C04B41/87; C30B29/36; C04B41/89; C23C16/32; C23C16/42; C23C16/458; C30B25/12
Domestic Patent References:
JP2013254853A
JP2011153045A
JP2010030846A
JP2006060195A
Foreign References:
CN101445392A
Attorney, Agent or Firm:
Patent business corporation Miya saki, table of contents patent office