Title:
炭化珪素ウエハ及びその製造方法
Document Type and Number:
Japanese Patent JP7298940
Kind Code:
B2
Abstract:
The method of preparing a silicon carbide wafer includes: disposing a raw material and a silicon carbide seed crystal to be separated in a reactor having an internal space; adjusting a temperature, a pressure, and an atmosphere of the internal space for sublimating the raw material and growing the silicon carbide ingot on the silicon carbide seed crystal; cooling the reactor and retrieving the silicon carbide ingot; and cutting the silicon carbide ingot to prepare the silicon carbide wafer, wherein the adjusting proceeds in a first inert gas atmosphere having a flow quantity of 100 sccm to 300 sccm, the cooling proceeds in a second inert gas atmosphere having a flow quantity of 1 sccm to 250 sccm, and the reactor has a thermal conductivity of 120 W/mK or less.
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Inventors:
Park, Jung Fi
Ku, Caprel
Choi, Jung Woo
Jean, Byung-kyu
Kyon, Myeongok
Kim, Jong Kyu
Seo, Jung Do
Ku, Caprel
Choi, Jung Woo
Jean, Byung-kyu
Kyon, Myeongok
Kim, Jong Kyu
Seo, Jung Do
Application Number:
JP2021144359A
Publication Date:
June 27, 2023
Filing Date:
September 03, 2021
Export Citation:
Assignee:
SENIC Inc.
International Classes:
C30B29/36; C30B23/06; H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| JP2021070623A | ||||
| JP2015000836A | ||||
| JP2014185055A | ||||
| JP2003226600A | ||||
| JP2007204309A | ||||
| JP2013129572A |
Foreign References:
| US20210123843 | ||||
| US20140287226 | ||||
| US20100175614 |
Other References:
YAN Q.S. ET AL,Surface and subsurface damage characteristics and material removal mechanism in 6H-SiC wafer grinding,MATERIALS RESEARCH INNOVATIONS,2014年05月30日,2014年VOL18 SUPPL2,S2-743,SR引用文献
Attorney, Agent or Firm:
SK Patent Attorney Corporation
Akihiko Okuno
Hiroyuki Ito
Akihiko Okuno
Hiroyuki Ito