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Title:
SILICON-CONTAINING COMPOUND, RESIST COMPOSITION AND PATTERN FORMATION METHOD
Document Type and Number:
Japanese Patent JP3839218
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a new polymeric silicon compound having high sensitivity and high resolution, which is not only used preferably as a material for two- layered resist method particularly suitable for forming a pattern of high aspect ratio, but also useful as a base polymer for a chemically amplified positive type resist material which can form a superior pattern in heat resistance, and to provide a chemically amplified positive type resist material including the compound as the base polymer and a method of forming a pattern.
SOLUTION: A compound includes one or more silicon containing substituents selected from general formulas (1)-(3).


Inventors:
Jun Hatakeyama
Takeshi Watanabe
Koji Hasegawa
Tsuyoshi Kanao
Application Number:
JP2000095990A
Publication Date:
November 01, 2006
Filing Date:
March 31, 2000
Export Citation:
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Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C08F230/08; G03F7/039; C08F30/08; C08F32/00; C08F232/08; C08F234/00; C08K5/00; C08L43/04; C08L45/00; G03F7/075; G03F7/40; H01L21/027; (IPC1-7): C08F30/08; C08F32/00; C08K5/00; C08L43/04; C08L45/00; G03F7/039; G03F7/075; G03F7/40; H01L21/027
Domestic Patent References:
JP63216044A
JP62073250A
JP63095207A
JP2001226432A
JP2001125272A
JP2001166486A
JP2000221686A
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura