To obtain a new polymer silicone compound which is preferably usable not only as a material for a two-layer resist method, having high sensitivity and high resolution, especially suitable for forming a pattern with a high aspect ratio but also as a base polymer for a chemical amplification positive type resist material for forming a pattern having excellent heat resistance and the chemical amplification positive type resist material comprising the compound as the base polymer, and to provide a method of pattern formation.
The silicon-containing polymer compound contains a repeating unit of three components represented by general formula (1) (R1, R2 and R3 are each hydrogen atom, a 1-10C straight-chain, branched-chain or cyclic alkyl group; R4, R5 and R6 are mutually the same or different and are each hydrogen atom, a 1-20C alkyl group, a haloalkyl group or a 6-20C aryl group; R7 is a 4-20C straight-chain, branched-chain or cyclic alkyl group; n is 1-5; p, q and r are each a positive number). The resist material is sensitive to high-energy rays and has excellent sensitivity, resolution and resistance to oxygen plasma etching at ≤300 nm wavelength.
HATAKEYAMA JUN
ISHIHARA TOSHINOBU
Saori Shigematsu
Katsunari Kobayashi