To provide a silicon-cross-linked thiophene oligomer superior in FET characteristics and an electronic device.
The silicon-cross-linked thiophene olygomer is expressed by formulae (I), (II) and (III) wherein R1, R2, R6, R7, R8and R9are independently substituents having structures expressed by an alkyl group, an alkenyl group, an alkynyl group, an alkoxyl group, an aryl group and a silyl group; R3, R4are independently an alkyl group, an alkenyl group, an alkynyl group, an alkoxyl group, an alkylthio group, a silyl group, or an aryl group; n1and n2are independently integers 4-10, m1is an integer 1-6, and m2and m3are independently integers 1-3; and at least one substituent selected among an alkyl group, an alkenyl group, an alkynil group, an alkoxyl group, an aryl group, an amino group and an alkylthio group may be substituted at the β-place of a thiophene ring.
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