Title:
SILICON ELECTROSTATIC EMISSION EMITTER AND ITS PREPARATION
Document Type and Number:
Japanese Patent JPH06231675
Kind Code:
A
Abstract:
PURPOSE: To make an insulating effect maximum, heighten the stability, prolong a life, and give high efficiency by forming an insulating layer into a multi-layer structure and parting a silicide and an oxide film at a prescribed distance. CONSTITUTION: An insulating layer with a three-layer structure constituted of nitride film (Si3 N4 ) 32 with thickness of 100-220nm, an oxide film (SiO2 ) 33 with thickness about 500-900nm, and an insulating film, which is also a dielectric film, (polyimide) 34 with thickness about 300-500nm is formed on a silicon substrate 31. The thickness of each of these films is determined by considering the insulating property, the dielectric property, interface adhesion strength, flatness between neighboring films, the distance from an emitter tip part, temperature and time necessary for forming the films, and the degree of the integration. The emitter tip end part, which is a practical electron emitting region of an emitter 37, is made of a silicide which is a thermally treated compound of a metal with a low work function and silicon. Consequently, the insulating effect is made to be a relative maximum and stability is heightened and at the same time the life is prolonged and high efficiency is obtained.
Inventors:
RI KOUGOKU
Application Number:
JP30610793A
Publication Date:
August 19, 1994
Filing Date:
November 12, 1993
Export Citation:
Assignee:
SAMSUNG ELECTRONIC DEVICES
International Classes:
H01J1/304; H01J9/02; (IPC1-7): H01J1/30; H01J9/02
Attorney, Agent or Firm:
Asato Kato