Title:
シリコンエッチング液およびエッチング方法
Document Type and Number:
Japanese Patent JP5472102
Kind Code:
B2
Abstract:
In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etching liquid. A silicon etching liquid which is an alkaline aqueous solution containing an alkali metal hydroxide, hydroxylamine and an inorganic carbonate compound and having a pH of 12 or more and which is able to anisotropically dissolve monocrystalline silicon therein, and an etching method of silicon using this etching liquid are provided.
Inventors:
Kazuyoshi Yaguchi
Ryuji Sotoka
Ryuji Sotoka
Application Number:
JP2010511045A
Publication Date:
April 16, 2014
Filing Date:
April 24, 2009
Export Citation:
Assignee:
Mitsubishi Gas Chemical Co., Ltd.
International Classes:
H01L21/306; C09K13/02
Domestic Patent References:
| JP2007214456A | 2007-08-23 | |||
| JP2007208018A | 2007-08-16 | |||
| JP2006351813A | 2006-12-28 | |||
| JP2007214456A | 2007-08-23 |