SILICON FILM AND ITS MANUFACTURING PROCESS

Title:

SILICON FILM AND ITS MANUFACTURING PROCESS

Document Type and Number:

Japanese Patent JPH08195496

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To obtain a silicon film which is stable mechanically although having a very small stress. SOLUTION: A silicon film previously applied with a predetermined stress is deposited on a silicon substrate 1 having a specified conductivity type by doping the substrate 1 with a doping agent n1 n2 having conductivity type opposite to that of the substrate and then etching the unprocessed section on the substrate electrochemically. The film thus formed comprises at least one first section A having predetermined thickness and at least one relatively thick second section B and the total sections constitute the silicon film.

Inventors:

HANSU ROSHIYUNAA
FUEN SHII
IBUAIRO DABURIYUU RANGEROU

Application Number:

JP24228695A

Publication Date:

July 30, 1996

Filing Date:

August 15, 1995

Export Citation:

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Assignee:

IMS IONEN MIKROFAB SYST (AT)
UNIV GESAMTHOCHSCHULE KASSEL (DE)

International Classes:

C25F3/12; G03F1/20; G03F1/22; H01L21/02; H01L21/027; H01L21/3063; G03F7/38; H01L21/308; H01L29/84; (IPC1-7): H01L29/84; H01L21/02; H01L21/027; H01L21/3063; H01L21/308

Attorney, Agent or Firm:

Minoru Yoshida (2 outside)

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