Title:
シリコンインゴット製造装置、シリコンインゴットの製造方法、シリコンインゴット、シリコンウェハ、太陽電池及びシリコンパーツ
Document Type and Number:
Japanese Patent JP5518776
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon ingot production apparatus capable of producing a silicon ingot having a low impurity content and a small impurity content variation.SOLUTION: The silicon ingot production apparatus has a lid 50 put on the crucible 20, an inert gas means is connected near the plane center of the lid 50, the lid 50 has a placing part 51 to be placed on the upper edge face of the side wall 22 of the crucible 20, a brim 52 protruded outward from the outer edge of the side wall 22 of the crucible 20 and an opening 53 penetrating along the thickness direction. The brim 52 is placed at the outer circumferential side of ≥10% of the outer circumferential edge of the upper end of the side wall 22 of the crucible 20, and the protruding length of the brim 52 from the outer edge of the upper end of the side wall 22 is ≥50 mm. The opening 53 is formed in a region within ≤100 mm from the inner edge of the upper end of the side wall 22 of the crucible 20, and the total exposure area of the inner region at the upper edge of the crucible 20 by the opening 53 is ≥1.5% and ≤10% of the total area of the inner region at the upper edge of the crucible 20.
Inventors:
Nobuyasu Futa
Yoshinobu Nakata
Hiroshi Ikeda
Yoshinobu Nakata
Hiroshi Ikeda
Application Number:
JP2011067960A
Publication Date:
June 11, 2014
Filing Date:
March 25, 2011
Export Citation:
Assignee:
Mitsubishi Materials Corporation
Mitsubishi Materials Electronic Chemicals Co., Ltd.
Mitsubishi Materials Electronic Chemicals Co., Ltd.
International Classes:
C01B33/02; B22D23/00; B22D25/04; H01L31/04
Domestic Patent References:
| JP2005088056A | ||||
| JP2004058075A | ||||
| JP2001010810A | ||||
| JP2000158096A | ||||
| JP2003137526A | ||||
| JP2003137525A | ||||
| JP10245216A |
Foreign References:
| WO2006104107A1 |
Attorney, Agent or Firm:
Masatake Shiga
Tadashi Takahashi
Tadashi Takahashi