Title:
SILICON-ON-INSULATOR STRUCTURE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3630401
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a planar silicon-on-insulator(SOI) structure and a method for manufacturing the structure.
SOLUTION: The SOI structure has a silicon wafer 10, an oxide layer 12 and a silicon layer 14. A trench is formed as extended from an upper surface of the structure to the silicon wafer, and the trench is filled with semiconductor 34. The trench has an upper part, a bottom surface and a sidewall. The sidewall has a sidewall silicon part. The sidewall silicon part of the trench sidewall is covered with a trench sidewall oxide layer 30. A protective sidewall 32 is formed on the trench sidewall and a trench sidewall oxide layer as extended from the upper part of the trench to the bottom surface of the trench.
Inventors:
Effendy Leo Bandung
Devenda Kay Sadana
Dominique jay shepis
Gavam Shahidi
Devenda Kay Sadana
Dominique jay shepis
Gavam Shahidi
Application Number:
JP2000035433A
Publication Date:
March 16, 2005
Filing Date:
February 14, 2000
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L21/205; H01L21/76; H01L21/762; H01L27/12; (IPC1-7): H01L27/12; H01L21/205
Domestic Patent References:
| JP8017694A | ||||
| JP10041381A | ||||
| JP6232246A | ||||
| JP5343320A | ||||
| JP8186165A | ||||
| JP6334030A | ||||
| JP11017001A | ||||
| JP1117043A | ||||
| JP1214047A | ||||
| JP10092923A |
Foreign References:
| WO1994027317A1 |
Attorney, Agent or Firm:
Hiroshi Sakaguchi
Yoshihiro City
Yoshihiro City