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Title:
SILICON LAMINATE
Document Type and Number:
Japanese Patent JPH07187643
Kind Code:
A
Abstract:

PURPOSE: To provide a silicon laminate capable of improving the photoelectric transfer efficiency and capable of being applied to a solar battery, optical sensor, etc., as such.

CONSTITUTION: This silicon laminate 20 consists of a substrate 21 made of a carbon sheet, a light reflecting film 22 formed on the substrate surface from ZrC, the SiC film 24 and the SiCx film 25 (0<x<1) successively formed on the film 22 surface and a p-type polycrystal silicon film 23 formed on the SiCx film 25. By this laminate, the light incident on the polycrystal silicon film is reflected on the light reflecting film 22, the reflected light is further reflected on the polycrystal silicon film surface, hence multiple reflection is repeated, and photoelectric transfer is also repeated. Meanwhile, the polycrystal silicon film can be epitaxially grown on the film by the action of the SiCx film, and the crystallinity is improved.


Inventors:
KONO NAOTAKE
Application Number:
JP32948593A
Publication Date:
July 25, 1995
Filing Date:
December 27, 1993
Export Citation:
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Assignee:
TONEN CORP
International Classes:
C01B33/02; C23C16/32; H01L31/04; (IPC1-7): C01B33/02; C23C16/32; H01L31/04
Attorney, Agent or Firm:
Kohei Kubota (1 person outside)



 
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