Title:
SILICON MELTING DEVICE
Document Type and Number:
Japanese Patent JP3508877
Kind Code:
B2
Abstract:
PURPOSE: To prevent the breakage of a graphite crucible from occurring by dividing the graphite crucible for holding a quartz crucible on its inside, in the circumferential direction into plural pieces, providing a space between every adjacent two of the divided pieces and fitting a ceramic spacer into each of the resultant spaces.
CONSTITUTION: In this device, a graphite crucible 3 is divided in the circumferential direction into about 2 to 10 equiangular pieces and a space between every adjacent two of the divided pieces such as pieces 3a, 3a, 3a is provided and a spacer 6 made of a ceramic material having heat resistance and a low expansion coefficient, such as Al2O3 is fitted into each of the resultant spaces. Then, lumpy polycrystalline Si is charged into a quartz crucible which is set in the graphite crucible 3 by holding the quartz crucible with a graphite holder and, thereafter, an induction current is generated in the graphite crucible 3 through actuating a heating means to heat the crucible 3, and thereby, to melt the polycrystalline Si in the quartz crucible. At the time of heating or cooling the graphite crucible 3, its greater expansion or contraction occurs than that of the quartz crucible, however, because of its divided structure, the graphite crucible 3 causes no breakage due to the internal stress.
Inventors:
Oshige, Ryuichi
Kobayashi, Kazuo
Uematsu, Hidetsugu
Norimoto, Tetsuhiro
Kobayashi, Kazuo
Uematsu, Hidetsugu
Norimoto, Tetsuhiro
Application Number:
JP20911994A
Publication Date:
March 22, 2004
Filing Date:
August 09, 1994
Export Citation:
Assignee:
SUMITOMO SITIX CORP
International Classes:
C30B15/10; C30B29/06; (IPC1-7): C30B29/06; C30B15/10
Attorney, Agent or Firm:
柳舘 隆彦 （外２名）
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