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Patent Searching and Data


Title:
SILICON NITRIDE-BASED PRESSED COMPACT AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JPH04367564
Kind Code:
A
Abstract:

PURPOSE: To provide a silicon nitride-based sintered compact requiring abrasion resistance at high temperatures and a method for producing the above-mentioned sintered compact.

CONSTITUTION: The subject method is a method for producing a silicon nitride- based sintered compact composed of sintering mixed powder composed of 0.3-5wt.% zirconium oxide powder and/or samarium oxide powder having ≤3μm average particle size with 3-30wt.% silicon carbide whisker, a sintering assistant in an amount of 3-15wt.% based on the silicon nitride powder and the remainder composed substantially of silicon nitride powder at a sintering temperature within the range of 1550-1700°C under ≥200kg/cm2 pressure. Furthermore, the silicon nitride-based sintered compact obtained by the aforementioned method is provided.


Inventors:
YAMAMOTO HIROICHI
MORI KAZUTAKA
HIRATA TAKEHIKO
Application Number:
JP14150891A
Publication Date:
December 18, 1992
Filing Date:
June 13, 1991
Export Citation:
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Assignee:
MITSUBISHI HEAVY IND LTD
International Classes:
C04B35/584; C04B35/58; (IPC1-7): C04B35/58
Attorney, Agent or Firm:
Akira Uchida (2 outside)