Title:
SILICON NITRIDE SINTERED COMPACT AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JP3454994
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a sintered compact excellent in high-temp. strength at 1,200°C and oxidation resistance at 1,000°C by firing at a low temp. of ≤1,850°C.
SOLUTION: A compact based on Si3N4 and contg. 1-20wt.% (expressed in terms of oxide) at least one selected from among Y and rare earth elements, 0.01-1wt.% (expressed in terms of oxides) Mn and/or Cu and 0.1-5wt.% (expressed in terms of oxides) W and/or Mo as auxiliary components is fired at ≤1,850°C in a nonoxidizing atmosphere contg. nitrogen to obtain the objective silicon nitride sintered compact having such superior characteristics as ≥1,050MPa strength at ordinary temp., ≥950MPa strength at 1,200°C and ≤0.1mg/cm2 increase in quantity by oxidation after an oxidation test at 1,000°C for 1,000hr.
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Inventors:
Takeo Fukudome
Masahiro Sato
Katsutoshi Sakagami
Masahiro Sato
Katsutoshi Sakagami
Application Number:
JP31254295A
Publication Date:
October 06, 2003
Filing Date:
November 30, 1995
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
C04B35/584; (IPC1-7): C04B35/584
Domestic Patent References:
| JP5826077A | ||||
| JP5891075A |
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