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Patent Searching and Data


Title:
SILICON OXIDE FILM ELECTRET AND ELECTRET CAPACITOR MICROPHONE
Document Type and Number:
Japanese Patent JP2002033241
Kind Code:
A
Abstract:

To provide a silicon oxide film electret, which is improved in moisture resistance characteristics and is immune to uses as an element for reflow, and to provide an electret capacitor microphone.

For this silicon oxide film electret, a silicon oxide film is formed on the surface of a base material 2, treated thermally at 200 to 400°C in the atmosphere of dry air, pure oxygen gas or oxygen containing Ar gas, without releasing the atmosphere from the filming atmosphere, and is charged later.


Inventors:
MINAMI UCHITSUGU
OBAYASHI YOSHIAKI
YASUDA MAMORU
JIYOUBE FUMIHIKO
Application Number:
JP2001138536A
Publication Date:
January 31, 2002
Filing Date:
May 09, 2001
Export Citation:
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Assignee:
MINAMI UCHITSUGU
HOSIDEN CORP
International Classes:
H04R19/01; H01G7/02; (IPC1-7): H01G7/02; H04R19/01
Attorney, Agent or Firm:
Shuichiro Kitamura (1 person outside)