Title:
SILICON QUANTUM FINE LINE STRUCTURE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3645032
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a structure whose silicon film thickness is increased at the part of a quantum fine line or at the parts other than the quantum fine line by independently controlling the thickness and the shape of a first silicon film which constitutes the quantum fine line and the thickness and the shape of a second silicon film which constitutes a quantum fine line connecting part.
SOLUTION: On a upper layer silicon layer 3, a silicon nitride film 4 is formed, the silicon nitride film 4 which exists on an area A is left by patterning and the silicon nitride film 4 on other areas is removed. The area A is a two- dimension part to be a lead for connecting the quantum fine line with the external. A resist layer is patterned by leaving the mask of the silicon nitride film 4 on the area A and a resist mask 5 is formed, excluding the area B of an opening. The silicon quantum fine line has a structure which independently controls the thickness and the shape of the first silicon film of the quantum fine line and the thickness and the shape of the second silicon film of the quantum fine line connecting part.
Inventors:
Yasuyuki Nakajima
Takahashi Yoshio
Takahashi Yoshio
Application Number:
JP12137496A
Publication Date:
May 11, 2005
Filing Date:
May 16, 1996
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
H01L29/06; H01L27/12; H01L29/66; (IPC1-7): H01L29/06
Domestic Patent References:
| JP7221098A | ||||
| JP6188408A | ||||
| JP9213953A | ||||
| JP9260633A |
Attorney, Agent or Firm:
Yoshihiko Izumi
Shigeru Kobayashi
Shigeru Kobayashi
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