To provide a silicon single crystal pulling apparatus growing a silicon single crystal having desired resistivity to which a sublimable dopant is reliably added at high concentration without depending on a time period until a first half of a cylindrical portion of the silicon single crystal is formed, and to provide a method for producing a silicon single crystal.
The silicon single crystal pulling apparatus 1a pulls a doped silicon single crystal from a melt by Czochralski method, wherein a plurality of sample dishes 20a placed above a pulling furnace 2 are used as a storage means for storing a sublimable dopant. The sample dish 20a is charged with a sublimable dopant, and the sample dish 20a connected to a hinge is tilted by a driving means 25a to feed the sublimable dopant into a doping tube 21a connected to one end of a supply tube 22. By sequentially feeding the dopant from the plurality of sample dishes 20a to the supply means by use of the drive means 25a, the sublimable dopant in high concentration can be supplied a plurality of times at desired timing during growing a crystal in a single batch.
SUDA AYUMI
NISHIOKA KENICHI
Hayashi Ichiyoshi
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