Title:
SILICON SINGLE CRYSTAL PULLING-UP METHOD
Document Type and Number:
Japanese Patent JP3890861
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain an ingot having no point defect agglomerates and exhibiting intrinsic gettering(IG) effect when formed into a wafer.
SOLUTION: When a region of less than the lowest interstitial silicon concentration capable of forming an interstitial-type large dislocation, which is adjacent to a region [I] having interstitial silicon point defects dominantly therein and also belongs to a perfect region [P] having no point defect agglomerate, is defined as [PI], and further, a region which is adjacent to a region [V] having vacancy point defects dominantly therein, belongs to the above region [P] and is less than a vacancy concentration capable of forming COP(crystal originated particles) or FPD(flow pattern defects), is defined as [PV], a silicon single crystal ingot which comprises both regions [PI] and [PV] and of which an oxygen concentration is 1.4×1018 atoms/cm3 or more (by the former ASTM) is heated and kept at a temperature of 600-500°C for 2-50 hr at the point of time when the temperature of the silicon single crystal ingot is lowered to a prescribed level within the rang of 1,000-600°C due to the pulling-up to obtain the objective ingot.
Inventors:
Atsushi Furukawa
Hideo Tanaka
Yuji Nakata
Hideo Tanaka
Yuji Nakata
Application Number:
JP2000230851A
Publication Date:
March 07, 2007
Filing Date:
July 31, 2000
Export Citation:
Assignee:
Sumco inc.
International Classes:
C30B29/06; C30B15/14; C30B33/02; H01L21/208; (IPC1-7): C30B29/06; C30B15/14; C30B33/02; H01L21/208
Domestic Patent References:
| JP3033093A | ||||
| JP6092780A | ||||
| JP7041391A | ||||
| JP11157996A | ||||
| JP11199387A | ||||
| JP2000053497A |
Attorney, Agent or Firm:
Masayoshi Suda
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