Title:
SILICON SOLAR BATTERY AND MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2002057355
Kind Code:
A
Abstract:
To provide a solar battery having high photovoltaic conversion efficiency by reducing impurity doping in a p-layer and an n-layer and realizing a silicon photoelectric conversion layer with superior field characteristics.
In a step for forming the p-layer 3 and the n-layer 6 in the silicon photovoltaic conversion layer, the vacuum level is made to 1.3×10-6 to 3×10-4 Pa in the film forming apparatus before each layer is formed. The film forming apparatus is baked, and the degas leakage amount from the apparatus is made 2.66×10-6 Pa.L/sec or less. The tube for feeding a raw gas to the film forming apparatus is baked and the degas leakage amount from the apparatus is made 6.65×10-6 Pa.L/sec or lower.
Inventors:
TAKEUCHI YOSHIAKI
TAKANO AKIMI
NISHIMIYA TATSUYUKI
HORIOKA RYUJI
MURATA MASAYOSHI
TAKANO AKIMI
NISHIMIYA TATSUYUKI
HORIOKA RYUJI
MURATA MASAYOSHI
Application Number:
JP2000243304A
Publication Date:
February 22, 2002
Filing Date:
August 10, 2000
Export Citation:
Assignee:
MITSUBISHI HEAVY IND LTD
International Classes:
H01L31/04; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Koharu Fujita (3 outside)