To provide a silicon structure and its manufacturing method, compatibly suppressing both occurrence of the sticking phenomenon and generation of waste etc. from dicing.

The silicon structure 100 is configured so that its overlayer 30 is formed on a base layer 12 with an intermediate layer 14 interposed. The overlayer 30 has three sections, i.e. a movable part 18, a stationary part 16, and a dicing region 20. As an intermediate layer 14a in a projected shaped is formed on a substrate directly under the movable part, there is no risk of the movable part being stuck to the substrate. Because the intermediate layer in the dicing region 20 has been removed, laser dicing is conducted, and generation of the waste etc. is suppressed. Thus suppressing occurrence of the sticking phenomenon and suppressing the generation of the waste etc. from dicing are performed compatibly.