Title:
SILICON WAFER
Document Type and Number:
Japanese Patent JPH05275297
Kind Code:
A
Abstract:
PURPOSE: To avoid an antiphase domain of 60° transition in a GaAs layer that is epitaxially grown on a silicon substrate.
CONSTITUTION: A silicon wafer has a step structure that includes (100)-planes in two directions, preferably three or more: <001>-, <011>- and <0-11>- directions at 3-5°.
Inventors:
Kosuke Asai
Application Number:
JP10226292A
Publication Date:
October 22, 1993
Filing Date:
March 27, 1992
Export Citation:
Assignee:
SUMITOMO METAL INDUSTRIES,LTD.
International Classes:
H01L21/02; (IPC1-7): H01L21/02
Attorney, Agent or Firm:
Tono Kono