Title:
半導体用シリコンウエハ、およびその製造方法
Document Type and Number:
Japanese Patent JP5072460
Kind Code:
B2
Abstract:
Silicon wafers having a density of BMDs with sizes between 20 to 40 nm at positions ¥ 20 µm below the wafer surface in the range of 5x10 11 /cm 3 , and a density of BMDs with sizes of ¥ 300 nm 1x10 7 /cm 3 , exhibit reduced slip dislocation and warpage. The wafers are sliced from a crystal grown under specific conditions and then subjected to both low temperature heat-treatment and high temperature anneal.
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Inventors:
Katsuhiko Nakai
Fukushima Sei
Wilfried Von Amon
Martin Weber
Herbert Schmidt
Fukushima Sei
Wilfried Von Amon
Martin Weber
Herbert Schmidt
Application Number:
JP2007178920A
Publication Date:
November 14, 2012
Filing Date:
July 06, 2007
Export Citation:
Assignee:
Siltronic AG
International Classes:
H01L21/322
Domestic Patent References:
| JP2000281491A | ||||
| JP2006040980A | ||||
| JP2000109396A | ||||
| JP10303208A | ||||
| JP2003068743A | ||||
| JP6310517A |
Attorney, Agent or Firm:
Fukami patent office