Title:
Silver diffusion barrier material, a silver diffusion barrier, silver diffusion barrier covering
Document Type and Number:
Japanese Patent JP6188025
Kind Code:
B2
Abstract:
By using silicon oxynitride with an oxygen content of 4.2 to 37.5 at% as a material for a barrier layer, adhesiveness similar to that of silicon oxide and an Ag diffusion prevention property similar to that of silicon nitride can be realized. In particular, in a semiconductor device in which a plurality of silicon chips is vertically stacked by through-silicon vias, Ag is prevented from being diffused into Si and adhesiveness to Si becomes favorable when an Ag/polypyrrole complex is used as a conductive filling material used for the formation of a barrier layer provided on the inner surface of the via.
Inventors:
Kawakita Hitoshi
Barbara holbas
Toyohiro Chikyo
Barbara holbas
Toyohiro Chikyo
Application Number:
JP2014102210A
Publication Date:
August 30, 2017
Filing Date:
May 16, 2014
Export Citation:
Assignee:
National Institute for Materials Science
International Classes:
H01L23/522; C08K3/08; C08L65/00; H01L21/3205; H01L21/768; H01L23/532; H01L25/065; H01L25/07; H01L25/18
Domestic Patent References:
| JP2007109736A | ||||
| JP2012119685A | ||||
| JP2005166502A |
Attorney, Agent or Firm:
Toshio Nishizawa
Shigerou
Shigerou
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