PURPOSE: To obtain patterns having good dimensional accuracy with decreased fluctuations by using plasma at the time of silylating a resist by a reaction apparatus equipped with a substrate heater in a reaction chamber.
CONSTITUTION: The resist is silylated by using the plasma by means of the reaction apparatus equipped with the substrate heater in the silylation reaction chamber 6 using the plasma in the process for silylating the plasma. A method for silylating the resist by directly converting a silicon-contg. gas to the plasma is more preferable. The silicon-contg. gas to be used includes silane, disilane, dichlorsilane, silane trichloride, silicon tetrachloride, tetrafluorosilicon, etc. Since the stability and reproducibility of the silylation are improved in this way, the substrate 3 provided with the patterns having the good dimensional accuracy and the decreased fluctuations is obtd.
NUMATA MASAYUKI
TAKAHASHI JUNICHI
YANAGIHARA KENJI
