Title:
METHOD FOR MEASURING COLLECTOR-EMITTER BREAKDOWN STRENGTH OF BIPOLAR TRANSISTOR
Document Type and Number:
Japanese Patent JP3239849
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To measure the punch through breakdown strength between the collector-emitter of a bipolar element accurately while protecting the element against fracture at the time of measurement.
SOLUTION: Assuming the collector current of a vertical bipolar transistor element for measuring the punch-through breakdown strength (BVCEO) is IC and the current amplification factor is hFE, a base current IB of 1% or less of Ic/hFE is fed to the base of the element. Under a state where the base current IB is injected to the base terminal, a constant voltage (VE) of ground potential is applied to the emitter element and the collector terminal is subjected to voltage sweeping at a specified step. When the collector current reaches the collector current IC for measuring the punch-through breakdown strength, voltage sweeping is stopped and the collector voltage VC, is measured as the punch-through breakdown strength.
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Inventors:
Masaru Wakabayashi
Application Number:
JP20150698A
Publication Date:
December 17, 2001
Filing Date:
July 16, 1998
Export Citation:
Assignee:
NEC
International Classes:
G01R31/26; H01L21/331; H01L21/66; H01L29/73; H01L29/732; (IPC1-7): G01R31/26
Domestic Patent References:
| JP8146079A | ||||
| JP6286757A | ||||
| JP6156980A | ||||
| JP8129051A |
Attorney, Agent or Firm:
Masanori Fujimaki