Title:
SINGLE CRYSTAL COMPONENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3417767
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To make it possible to realize a deep etching of 300μm or deeper in an Si single crystal substrate with good reproducibility and moreover, at a high yield by an anisotropic etching and to make it possible to contrive the enhancement of the processing accuracy of a groove the etching.
SOLUTION: In a method of manufacturing a single crystal component of a structure, in which a groove having a striped opening is provided in the surface part of a substrate, a first mask 2 having a striped opening is formed on the Si single crystal substrate 1 and thereafter, a first anisotropic etching is performed on the substrate 1 using this first mask 2. Then, after the mask 2 is removed, a second mask 2', which has a striped opening and has a boundary on a slow-etching crystal face formed by the first anisotropic etching, is formed and after that, a second anisotropic etching is performed on the substrate 1 using the mask 2'.
Inventors:
Hideto Furuyama
Application Number:
JP22826596A
Publication Date:
June 16, 2003
Filing Date:
August 29, 1996
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
B81C1/00; H01L21/302; F15C5/00; G02B6/24; G02B6/36; G02B6/38; G02B6/42; H01L21/306; (IPC1-7): H01L21/306
Domestic Patent References:
| JP5347294A | ||||
| JP55113333A |
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)
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