Title:
SINGLE CRYSTAL DIAMOND, AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2012131707
Kind Code:
A
Abstract:
To stably provide a high-quality single crystal diamond useful as a substrate for a semiconductor device, and having a large area and little strain.
The single crystal diamond is grown by a vapor phase synthesis method, wherein the retardation between two mutually orthogonal linearly polarized lights outgoing from a principal surface being the opposite surface by irradiation of a linearly polarized light regarded as the synthesis of two mutually orthogonal linearly polarized lights on the other principal surface is a maximum of ≤50 nm per 100 μm of a sample thickness across the whole sample.
Inventors:
MEGURO KIICHI
YAMAMOTO YOSHIYUKI
IMAI TAKAHIRO
YAMAMOTO YOSHIYUKI
IMAI TAKAHIRO
Application Number:
JP2012089259A
Publication Date:
July 12, 2012
Filing Date:
April 10, 2012
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B29/04; C01B31/06; C23C16/02; C23C16/27
Domestic Patent References:
| JP2004503460A | 2004-02-05 | |||
| JPH09124393A | 1997-05-13 | |||
| JP2003277183A | 2003-10-02 |
Foreign References:
| WO2004046427A1 | 2004-06-03 |
Attorney, Agent or Firm:
Masami Sakai
Norio Kagami
Norio Kagami