Title:
Single crystal manufacturing method
Document Type and Number:
Japanese Patent JP6015641
Kind Code:
B2
Abstract:
Method for manufacturing a single crystal according to a CZ method, including: pre-examining a correlation between an Al/Li ratio in a quartz raw material powder used for producing the quartz crucible, a use time of the crucible, a devitrification ratio at the use time, and occurrence or nonoccurrence of melt leakage attributable to the devitrification part; setting a range of the devitrification ratio of the quartz crucible in order not to generate the melt leakage, and determining a maximum use time of the quartz crucible according to the Al/Li ratio so as to fall within the set range of the ratio, on the basis of the correlation; and growing the single crystal by using the quartz crucible in the range of the maximum use time. This provides a manufacturing method which can efficiently use a quartz crucible to grow a single crystal while preventing occurrence of melt leakage.
Inventors:
Yuichi Miyahara
Takashima Sho
Sawasaki Yasuhiko
Atsushi Iwasaki
Takashima Sho
Sawasaki Yasuhiko
Atsushi Iwasaki
Application Number:
JP2013252747A
Publication Date:
October 26, 2016
Filing Date:
December 06, 2013
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B29/06; C30B15/10
Domestic Patent References:
| JP2006016240A | ||||
| JP2010155760A | ||||
| JP7330483A | ||||
| JP2014005154A |
Attorney, Agent or Firm:
Mikio Yoshimiya