Title:
SINGLE CRYSTAL PRODUCTION DEVICE AND SINGLE CRYSTAL PRODUCTION METHOD
Document Type and Number:
Japanese Patent JP2018080098
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a single crystal production device and a single crystal production method, whereby: in the growth of homogeneous single crystals from a melt composition other than a harmonious composition in which the compositions of solid and liquid match, the crystal growth rate is high and the productivity is excellent, and the melt composition is made uniform during growth, and they can be easily controlled.SOLUTION: A single crystal production device has a crucible that can hold raw material, a lift-down device that supports the crucible so that it can lift down the crucible, powder raw material supply means that can supply powder raw material into the crucible, and a heater inside the crucible, held at a higher position than the bottom of the crucible.SELECTED DRAWING: Figure 1
Inventors:
KITAGAWA TAIZO
Application Number:
JP2016225224A
Publication Date:
May 24, 2018
Filing Date:
November 18, 2016
Export Citation:
Assignee:
SUMITOMO METAL MINING CO
International Classes:
C30B13/18; C30B29/30; F27B14/14; F27B14/16
Domestic Patent References:
| JP2010120821A | 2010-06-03 | |||
| JPH03193689A | 1991-08-23 | |||
| JP2014214078A | 2014-11-17 | |||
| JP2009221101A | 2009-10-01 | |||
| JP2010260747A | 2010-11-18 | |||
| JP2000344595A | 2000-12-12 | |||
| JPH0259494A | 1990-02-28 | |||
| JPS58130195A | 1983-08-03 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito