Title:
単結晶ワイヤおよびその製造方法
Document Type and Number:
Japanese Patent JP4971165
Kind Code:
B2
Abstract:
Disclosed are a single crystal wire and other single crystal articles, and a manufacturing method thereof. The method comprises the steps of: placing into a growth crucible at least one metal selected from the group consisting of gold, copper, silver, aluminum and nickel; heating and melting the metal placed in the growth crucible; growing a single crystal using metal crystal as a seed by Czochralski or Bridgman method; cutting the grown single crystal by electric discharge machining; and machining the cut single crystal and producing a wire or other articles such as a ring. In the method, the grown metal single crystal is cut into a disc-shaped piece by electric discharge machining. The piece is transformed into a single crystal wire or other articles by wire-cut electric discharge machining, and the single crystal wire can be used as a ring, a pendant, or a wire for high-quality cables for audio and video systems. Also, the single crystal formed into the disc-shaped piece by electric discharge machining can be used as a substrate and a target for deposition.
Inventors:
John, Se Yang
Cho, Cheryeon
Park, San Aeon
Kim, Sunkyu
Cho, Cheryeon
Park, San Aeon
Kim, Sunkyu
Application Number:
JP2007532238A
Publication Date:
July 11, 2012
Filing Date:
September 15, 2005
Export Citation:
Assignee:
Busan National University Industry-University Co-Operation Foundation
International Classes:
C30B29/02; C30B11/00; C30B11/14; C30B15/00; C30B15/02; C30B15/10; C30B15/14; C30B15/36; C30B29/62; C22B11/02
Domestic Patent References:
| JP61163504A | ||||
| JP62285311A |
Foreign References:
| US5900166 |
Attorney, Agent or Firm:
▲吉▼川 俊雄