Title:
SINGLE ELECTRONIC ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP2586834
Kind Code:
B2
Abstract:
PURPOSE: To acquire a single electronic element which can be manufactured with good controllability and can be integrated.
CONSTITUTION: A fine line part 15 is constituted of two-dimensional electronic gas of GaAs compound semiconductor heterojunction, Ga focusing ion beam is cast on a part of the fine line part 15 at a fine width for forming an FIB imperfect damaged region 20 and the damaged region 20 is made an electron conduction region. A gate 21 is formed near the damaged region and a single channel is formed in the electron conduction region 20 by applying a voltage to the gate 21. Source/drain regions 16, 17 are formed at both end parts of the fine line part 15 and a single electron element of an MOS structure is formed.
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Inventors:
KO SEIGU
NAKAMURA KAZUO
HENRI REZETSUKU
NAKAMURA KAZUO
HENRI REZETSUKU
Application Number:
JP26137194A
Publication Date:
March 05, 1997
Filing Date:
September 30, 1994
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/78; H01L29/66; H01L29/68; H01L29/80; (IPC1-7): H01L29/78; H01L29/68; H01L29/80
Attorney, Agent or Firm:
Suzuki Akio