Title:
枚葉式CVD装置および枚葉式CVD方法
Document Type and Number:
Japanese Patent JP4304547
Kind Code:
B2
Abstract:
In the field of depositing a metal film for wiring purposes on a substrate by means of single-substrate processing CVD, a procedure for depositing a copper film on a substrate is carried out by utilizing a first CVD module in which film deposition is carried out under first film deposition conditions where the film deposition rate is low and the filling characteristics are good, and a second CVD module in which film deposition is carried out under second film deposition conditions where the film deposition rate is high and the filling characteristics are poor. One CVD film deposition process in which a metal film for wiring purposes is deposited is carried out with sub-processes based on two different sets of film deposition conditions.
Inventors:
Osamu Okada
Atsushi Sekiguchi
Atsushi Sekiguchi
Application Number:
JP9239998A
Publication Date:
July 29, 2009
Filing Date:
March 20, 1998
Export Citation:
Assignee:
Canon ANELVA Corporation
International Classes:
H01L21/205; H01L21/285; C23C16/18; C23C16/44; C23C16/52; C23C16/54; H01L21/28
Domestic Patent References:
| JP7115073A | ||||
| JP10074761A | ||||
| JP10074763A | ||||
| JP6256950A |
Attorney, Agent or Firm:
Tamiya Hiroshi