Title:
ウェーハの枚葉式エッチング方法
Document Type and Number:
Japanese Patent JP4974904
Kind Code:
B2
Abstract:
An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.
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Inventors:
Sakae Furuyada
Tomohiro Hashii
Katsuhiko Murayama
Kazunari Takaishi
Takeo Kato
Tomohiro Hashii
Katsuhiko Murayama
Kazunari Takaishi
Takeo Kato
Application Number:
JP2007556821A
Publication Date:
July 11, 2012
Filing Date:
January 24, 2007
Export Citation:
Assignee:
Sumco inc.
International Classes:
H01L21/306
Domestic Patent References:
| JPS5846643A | 1983-03-18 | |||
| JP2004111668A | 2004-04-08 | |||
| JP2002064079A | 2002-02-28 |
Attorney, Agent or Firm:
Masayoshi Suda